MOSFET N-Chan 600V 9.2 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 9.2 A | ||
Resistance Drain-Source RDS (on) : | 0.75 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25 ID @ TC = 100 IDM |
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current |
9.2 5.8 37 |
A |
PD @TC = 25 |
Power Dissipation |
170 |
W |
Linear Derating Factor | 1.3 | W/ | |
VGS |
Gate-to-Source Voltage |
± 30 |
V |
dv/dt TJ TSTG |
Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds |
5.0 -55 to + 150 300 (1.6mm from case ) |
V/ns |