IRFS9N60APBF

MOSFET N-Chan 600V 9.2 Amp

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SeekIC No. : 00150330 Detail

IRFS9N60APBF: MOSFET N-Chan 600V 9.2 Amp

floor Price/Ceiling Price

US $ 1.05~1.29 / Piece | Get Latest Price
Part Number:
IRFS9N60APBF
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.29
  • $1.23
  • $1.12
  • $1.05
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 0.75 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 0.75 Ohms


Application

· Switch Mode Power Supply ( SMPS )
· Uninterruptable Power Supply
· High Speed Power Switching
· Lead-Free



Specifications

  Parameter Max. Units
ID @ TC = 25

ID @ TC = 100

IDM
Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current
9.2

5.8

37
A
PD @TC = 25

Power Dissipation
170

W
  Linear Derating Factor 1.3 W/
VGS

Gate-to-Source Voltage
± 30

V

dv/dt

TJ

TSTG


Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

5.0

-55 to + 150



300 (1.6mm from case )
V/ns









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