FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 170nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 3.8W
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 14 mOhm @ 45A, 10V
Input Capacitance (Ciss) @ Vds: 6160pF @ 25V
Application·High frequency DC-DC converters
·Motor Control
·Uninterrutible Power Supplies
·Lead-FreeSpecifications
|
Parameter |
Maximum |
Units |
|
ID @ TC=25 |
Continuous Drain Current,VGS @-10V |
75 |
A |
|
ID @ TC=100 |
Continuous Drain Current,VGS @-10V |
53 |
|
IDM |
Pulsed Drain Current |
300 |
|
PD@ TC= 25 |
Power Dissipation |
3.8 |
W |
|
PD@ TA= 25 |
Power Dissipation |
200 |
|
|
Linear Derating Factor |
1.4 |
W/ |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
dv/dt |
Peak Diode Recovery dv/dt |
8.2 |
V/nS |
|
Tj,TSTG |
Operating Junction and Storage Temperature Range |
-55 to 175 |
|
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
|
|
Mounting torqe,6-32 or M3 screw |
10lbf`in(1.1N`m) |
|
Notes through are on page 11
IRFSL4710PBF Data Sheet
