IRG4BC10SD-SPBF

IGBT Transistors 600V DC-1kHz

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IRG4BC10SD-SPBF: IGBT Transistors 600V DC-1kHz

floor Price/Ceiling Price

US $ .73~1.66 / Piece | Get Latest Price
Part Number:
IRG4BC10SD-SPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.66
  • $1.07
  • $.77
  • $.73
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/3

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.8 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 14 A Power Dissipation : 38 W
Package / Case : D2PAK Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.8 V
Package / Case : D2PAK
Continuous Collector Current at 25 C : 14 A
Power Dissipation : 38 W


Features:

• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard D2Pak & TO-262 packages
• Lead-Free



Specifications

Parameter

Max.

Units
VCES Collector-to-Emitter Voltage

600

V
IC @ TC = 25 Continuous Collector Current

14

A
IC @ TC = 100 Continuous Collector Current

8.0

ICM Pulsed Collector Current

18

ILM Clamped Inductive Load Current

18

IF @ TC = 100 Diode Continuous Forward Current

4.0

IFM Diode Maximum Forward Current

18

VGE Gate-to-Emitter Voltage

± 20

V
PD @ TC = 25 Maximum Power Dissipation

38

W
PD @ TC = 100 Maximum Power Dissipation

15

TJ
TSTG
Operating Junction and
Storage Temperature Range

-55 to +150

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10H, RG = 100W (figure 19)


Parameters:

Technical/Catalog InformationIRG4BC10SD-SPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)14A
Vce(on) (Max) @ Vge, Ic1.8V @ 18V, 8A
Power - Max38W
Mounting TypeSurface Mount
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRG4BC10SD SPBF
IRG4BC10SDSPBF



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