IRG4BC10SPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB
Collector-Emitter Saturation Voltage : 1.7 V
Continuous Collector Current at 25 C : 14 A
Power Dissipation : 38 W


Features:

• S-Speed: Minimizes power dissipation at up to 3KHz PWM frequency in inverter drives, up to 4KHz in brushless DC drives, up to 2KHz in Chopper Applications
• Very Tight Vce(on) distribution
• Industry standard TO-220AB package
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
			A
IC @ Tc = 25	Continuous Drain Current	14
IC @ Tc = 100	Continuous Drain Current	8
ICM	Pulsed Drain Current	18
ILM	Clamped Inductive Load Current	18
VGE	Gate-to-Emitter Voltage	±20	V
EARV	ReverseVoltage Avalanche Energy	110	mJ
PD @Tc= 25	C Max. Power Dissipation	38	W
PD @Tc= 100	C Max. Power Dissipation	15	W
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting Torque, 6-32 or M3 Screw.	10 lbf•in (1.1 N•m)

Parameters:

Technical/Catalog Information	IRG4BC10SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	14A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 8A
Power - Max	38W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC10SPBF IRG4BC10SPBF