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MFG:IR  Package Cooled:TO-263  D/C:04+  

IRG4BC30F Product Image

IRG Series Datasheet download

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Part Number: IRG4BC30F

 

MFG: IR

Package Cooled: TO-263

D/C: 04+

 

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IRG4BC30F Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
600
V
IC @ TC =25°C
Continuous Collector Current
31
A
 
IC @ TC=100°C
Continuous Collector Current
17
ICM
Pulsed Collector Current
120
ILM
Clamped Inductive Load Current
120
VGE
Gate-to-Emitter Voltage
± 20
V
EARV
Reverse Voltage Avalanche Energy
10
MJ
PD @TC =25°C
Maximum Power Dissipation
100
W
PD @TC =100°C
Maximum Power Dissipation
42
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm from case
Mounting torque, 6-32 or M3 screw.
10 lbf*in (1.1N*m)

IRG4BC30F Features

* Fast: optimized for medium operating
   frequencies ( 1-5 kHz in hard switching, >20
  kHz in resonant mode).
* Generation 4 IGBT design provides tighter
  parameter distribution and higher efficiency than
  Generation 3
* Industry standard TO-220AB package

IRG4BC30F datasheet

IRG4BC30F
PDF/DataSheet Download

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