IRG4BC40SPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.5 V
Package / Case : TO-220AB
Power Dissipation : 160 W
Continuous Collector Current at 25 C : 60 A


Features:

• Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-220AB package
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Breakdown Voltage	600	V
IC@ TC = 25	Continuous Collector Current	60	A
IC@ TC = 100	Continuous Collector Current	31
ICM	Pulsed Collector Current	120
ILM	Clamped Inductive Load Current	120
VGE	Gate-to-Emitter Voltage	±20	V
EARV	Reverse Voltage Avalanche Energy	15	mJ
PD @ TC =25	Maximum Power Dissipation	160	W
PD @ TC =100	Maximum Power Dissipation	65
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf`in (1.1N`m)

Parameters:

Technical/Catalog Information	IRG4BC40SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 31A
Power - Max	160W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC40SPBF IRG4BC40SPBF