IRG4PC40FDPbF

      IRG4PC40FDPbF is a kind of insulated gate bipolar transistor with ultrafast soft recovery diode. Here you can get some information about the feature. First is the ultrfast feature which is optimized for medium operating frequencies (1-5 KHz in hard switching,>20KHz in resonant mode.Besides,Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.Furthermore,IGBT co-packaged with HEXFRED ultrafast,ultra-soft-recovery anti-parallel diodes for use in bridge configurations.What's more,it is packed with industry standard TO-247AC package.At last,it is lead free. 
      The following is about the absolute maximum ratings.The maximum V_CES (collector-to-emitter voltage) is 600 V.The maximum I_C(continuous collector current) is 49 A at T_C=25 and 27 A at T_C=100.The maximum I_CM (Pulsed collector current) is 200 A.The I_LM (clamped inductive load current) is 200 A.The maximum I_F (diode continuous foward current) is 15 A at T_C=100.The maximum I_FM (diode maximum foward current) is 200 A.
The maximum V_GE (gate-to-emittor voltage) is ±20 V.The maximum P_D (power dissipation) is 160 W at T_C=25 and 65 W at TC=100.The T_J and T_STG (operating junction and storage temperature range) are both from -55 to 150.The soldering temperature for 10 seconds is 300.Then is about the thermal resistance.The maximum R_JC (Junction-to-Case-IGBT) is 0.77/W and the maximum R_JC (Junction-to-Case-Diode) is 1.7/W.The maximum R_JA (Junction-to-Ambient typical socket mount) is 40/W.The typical R_CS (Case-to-Sink,falt,greased surface) is 0.24/W.
      Next is about the static characteristics at T_J=25.The minimum V_(BR)CES (drain-to-source breakdown voltage) is 600 V at V_GE=0 V,IC=250A.The typical V_(BR)CES/T_J (breakdown voltage temperature coefficient) is 0.70 V/ at V_GE=0 V and I_C=1.0mA.The minimum V_GE(th) (gate threshold voltage) is 3.0 V and the maximum is 6.0 V at V_CE=V_GE,I_C=250A.The maximum I_CES (zero gate voltage collector current) is 250A at V_GE=0 V,V_CE=600 V and is 3500A at V_CE=600 V,V_GE=0 V,T_J=150.The maximum (I_GES) (gate-to-emitter leakage current) is ±100 nA at V_GE=±20 V.