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MFG:IR  D/C:TO-247  

IRG4PC40UD Product Image

IRG Series Datasheet download

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Part Number: IRG4PC40UD

 

MFG: IR

 

D/C: TO-247

 

Urgent Purchase

IRG4PC40UD Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
600
V
IC @ TC = 25
Continuous Collector Current
40
A
IC @ TC = 100
Continuous Collector Current
20
ICM
Pulsed Collector Current 
160
ILM
Clamped Inductive Load Current 
160
IF @ TC = 100
 Diode Continuous Forward Current
15
mJ
IFM
 Diode Maximum Forward Current
160
VGE
Gate-to-Emitter Voltage
± 20
PD @ TC = 25
Maximum Power Dissipation
160
W
PD @ TC = 100
 Maximum Power Dissipation
65
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case
Mounting Torque, 6-32 or M3 Screw.               10 lbf•in (1.1 N•m)  

IRG4PC40UD Features

• UltraFast:  Optimized for high operating frequencies 8-40 kHz in hard
   switching, >200 kHz in resonant mode• Generation 4 IGBT design
   provides tighter parameter distribution and higher efficiency than
   Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-
   parallel diodes for use in bridge configurations
• Industry standard TO-247AC package

IRG4PC40UD datasheet

IRG4PC40UD
PDF/DataSheet Download

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