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Part Number: IRGIB10B60KD1PbF

 

 

 

 

 

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IRGIB10B60KD1PbF Maximum Ratings

Parameter Symbol Rating Unit
Collector-to-Emitter Voltage VCES 600 V
Continuous Collector Current IC @ TC = 25 16 A
Continuous Collector Current IC @ TC = 100 10 A
Pulse Collector Current (Ref.Fig.C.T.5) ICM 32 A
Clamped Inductive Load current ILM 32  
Diode Continuous Forward Current IF @ TC = 25 16 A
Diode Continuous Forward Current IF @ TC = 100 10 A
Diode Maximum Forward Current IFM 32 A
RMS Isolation Voltage, Terminal to Case, t = 1 min VISOL 2500 V
Gate-to-Emitter Voltage VGE ±20 V
Maximum Power Dissipation PD @ TC = 25 44 W
Maximum Power Dissipation PD @ TC = 100 22 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 175
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf.in (1.1N.m)  

IRGIB10B60KD1PbF Features

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
• Lead-Free

IRGIB10B60KD1PbF datasheet

IRG4BAC50S
PDF/DataSheet Download

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