IGBT Transistors
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Features: · Advanced Trench IGBT Technology· Optimized for Sustain and Energy Recovery circuits in...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
| Maximum Gate Emitter Voltage : | +/- 20 V | Continuous Collector Current at 25 C : | 11 A |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220-3 |
| Packaging : | Tube |
| Technical/Catalog Information | IRGIB6B60KD116P |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 11A |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 5A |
| Power - Max | 38W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Fullpak (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGIB6B60KD116P IRGIB6B60KD116P |