IRGMC30F

The IRGMC30F is a kind of insulated gate bipolar transistors (IGBTs) from international rectifier which have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET and they provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the IRGMC30F.

The features of IRGMC30F can be summarized as (1)electrically isolated and hermetically sealed; (2)simple drive requirements; (3)latch-proof; (4)fast speed operation3kHz - 8kHz; (5)switching-loss rating includes all "tail" losses.

The absolute maximum ratings of IRGMC30F are (1)VCES collector-to-emitter breakdown voltage: 600 V; (2)IC @ TC = 25°C continuous collector current: 23A; (3)IC @ TC = 100°C continuous collector current: 12A; (4)ICM pulsed collector current: 92A; (5)ILM clamped inductive load current: 92A; (6)VGE gate-to-emitter voltage: ± 20V; (7)PD @ TC = 25°C maximum power dissipation: 75W; (8)PD @ TC = 100°C maximum power dissipation: 30W; (9)TJ operating junction and TSTG storage temperature range: -55 to + 150°C; (10)lead temperature 300 (0.063in./1.6mm from case for 10s); (11)weight: 9.3 (typical) g.