Position: Home  > All Categories> Integrated Circuits (ICs) > IRGMC40F

IRGMC40F

Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation 3 kHz - 8 kHz• Switching-loss rating includes all tail lossesSpecifications Parameter Max. Units VCES Collector-to-Emitter Volt...

product image

IRGMC40F Picture
See larger image
SeekIC No. : 004377845 Detail

IRGMC40F: Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation 3 kHz - 8 kHz• Switching-loss rating includes al...

IRGMC40F Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRGMC40F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation 3 kHz - 8 kHz
• Switching-loss rating includes all "tail" losses


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
35*
A
IC @ TC = 100°C Continuous Collector Current
20
ICM Pulsed Collector Current
152
ILM Clamped Inductive Load Current
152
VGE Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C Maximum Power Dissipation
125
W
PD @ TC = 100°C Maximum Power Dissipation
50
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Lead Temperature
300 (0.063 in. (1.6mm) from case)
  Weight
9.3 (typical)
*Current is limited by pin diameter
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
-
1.0
°C/W
RCS Case-to-Sink
0.21
-
RJA Junction-to-Ambient
-
48



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGMC40F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.The IRGMC40F provides substantial benefits to a host of high-voltage, high-current applications.

The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),as well as an indication of the current handling capability of the device.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Resistors
A101G
3006P-1-205LF
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Discrete Semiconductor Products
T508N12TOF
MUR20040
Line Protection, Backups
BX0023
A20B-1008-0550
View more