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MFG:IR  D/C:07+  

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Part Number: IRGP20B60PDPbF

 

MFG: IR

 

D/C: 07+

 

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IRGP20B60PDPbF Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25 Continuous Collector Current 40 A
IC @ TC = 100 Continuous Collector Current 22 A
ICM Pulse Collector Current (Ref. Fig. C.T.4) 80 A
ILM Clamped Inductive Load Current 80 A
IF @TC = 25 Diode Continous Forward Current 31 A
IF @TC = 25 Diode Continous Forward Current 12 A
IFRM Maximum Repetitive Forward Current

42

 A
VGE Continuous Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 220 W
PD @ TC = 100°C Maximum Power Dissipation 86 W
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 150
  Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting Torque, 6-32 or M3 Screw 10 lbf`in (1.1 N`m)  

IRGP20B60PDPbF Features

• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability

IRGP20B60PDPbF Typical Application

• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
• Lead-Free

IRGP20B60PDPbF datasheet

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