IRGP4086PBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Package / Case : TO-247
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 300 V
Continuous Collector Current at 25 C : 70 A
Power Dissipation : 160 W


Features:

·Advanced Trench IGBT Technology
·Optimized for Sustain and Energy Recovery Circuits in PDP Applications 
·Low _VCE(on) and Energy per Pulse (E_PULSE^TM ) for Improved Panel Efficiency
·High Repetitive Peak Current Capability
·Lead Free Package


Specifications

Symbol	Parameter	Max.	Units
VGE	Drain-Source Voltage	±30	V
IC @ TC =25	Continuous Drain Current,VGE @ 15V	70	A
IC @ TC =100	Continuous Drain Current,VGE @ 15V	40
IRP TC =25	Pulsed Drain Current	250
PD @TC=25	Power Dissipation	160	W
PD @TC=100	Power Dissipation	63	W
	Linear Derating Factor	1.3	W/
TJ,TSTG	Operating Junction and Storage Temperature Range	-40 to+150
	Soldering Temperature for 10 seconds	300
	Mounting Torque, 6-32 or M3 Screw	10lbin (1.1Nm)	N

Description

This IGBT IRGP4086PbF is specifically designed for applications in Plasma Display Panels. The IRGP4086PbF utilizes advanced trench IGBT technology to achieve low V_CE(on) and low E_PULSE^TM rating per silicon area which improve panel efficiency. Additional features are 150 operating junction temperature and high repetitive peak curren capability. The IRGP4086PbF features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

Parameters:

Technical/Catalog Information	IRGP4086PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	70A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 70A
Power - Max	160W
Mounting Type	Through Hole
Package / Case	TO-247AC
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGP4086PBF IRGP4086PBF