IRGP50B60PD1PBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-247
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 75 A
Collector-Emitter Saturation Voltage : 2.35 V
Power Dissipation : 390 W


Features:

• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability


Application

• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
• Lead-Free

 

Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC = 25	Continuous Collector Current	75	A
IC @ TC = 100	Continuous Collector Current	45	A
ICM	Pulse Collector Current (Ref. Fig. C.T.4)	150	A
ILM	Clamped Inductive Load Current 􀀀	150	A
IF @TC = 25	Diode Continous Forward Current	40	A
IF @TC = 25	Diode Continous Forward Current	15	A
IFRM	Maximum Repetitive Forward Current	60	A
VGE	Gate-to-Emitter Voltage	±20	V
PD @ TC = 25°C	Maximum Power Dissipation	390	W
PD @ TC = 100°C	Maximum Power Dissipation	156	W
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting Torque, 6-32 or M3 Screw	10 lbf`in (1.1 N`m)

Description

 


Parameters:

Technical/Catalog Information	IRGP50B60PD1PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	75A
Vce(on) (Max) @ Vge, Ic	2.85V @ 15V, 50A
Power - Max	390W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGP50B60PD1PBF IRGP50B60PD1PBF