Position: Home  > All Categories> Integrated Circuits (ICs) > IRGPF30F

IRGPF30F

Features: • Switching-loss rating includes all tail losses• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 900 V IC @ TC = 25°C Cont...

product image

IRGPF30F Picture
See larger image
SeekIC No. : 004377898 Detail

IRGPF30F: Features: • Switching-loss rating includes all tail losses• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Pa...

IRGPF30F Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRGPF30F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve


Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 900 V
IC @ TC = 25°C Continuous Collector Current 20 A
IC @ TC = 100°C Continuous Collector Current 11 A
ICM Pulsed Collector Current 40 A
ILM Clamped Inductive Load Current 40 A
VGE Gate-to-Emitter Voltage ±20 V
EARV Reverse Voltage Avalanche Energy 10 mJ
PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42 W
TJ TSTG Operating Junction and
Storage Temperature Range		 -55 to +150 °C
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) °C
  Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)  



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGPF30F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGPF30F provides substantial benefits to a host of high-voltage, highcurrent applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Line Protection, Backups
BX0023
A20B-1008-0550
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Test Equipment
TOP853
TOP2005
Undefined Category
VI-B63-IU
X27 589
View more