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IRHNJ67230

Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Symbol Parameter Max. Units ID @ VGS = 12V, TC = 25°C Conti...

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IRHNJ67230: Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package...

IRHNJ67230 Data Sheet

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Part Number:
IRHNJ67230
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

·Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight


Specifications

Symbol Parameter Max. Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 16 A
ID @ VGS = 12V, TC =100°C Continuous Drain Current 10 A
IDM Pulsed Drain Current 64 A
PD @ TV = 25 Power Dissipation 75 W
  Linear Derating Factor

0.6

 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 60 mJ
IAR Avalanche Current 16 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt Peak Diode Recovery dv/dt 6.2 V/ns
TJ, TSTG Operating Junction
Storage Temperature Range		 -55 to 150
  Pckg. Mounting Surface Temp. 300 (for 5s)
  Weight 1.0 (Typical) g



Description

International Rectifier's R6TM technology IRHNJ67230 provides superior power MOSFETs for space applications. These devices IRHNJ67230 have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices IRHNJ67230 retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.




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