Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Drain-Source Breakdown Voltage
: 40 V
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 16 V
Resistance Drain-Source RDS (on)
: 5 mOhms
Continuous Drain Current
: 200 A
Features: Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Silicon Limited) |
180 |
A |
| ID @ TC =100 |
Continuous Drain Current, VGS @ 10V |
130 |
| ID @ TC = 25 |
Continuous Drain Current,VGS @ 10V (Package Limited) |
75 |
| IDM |
Pulsed Drain Current |
790 |
| PD @TC= 25 |
Power Dissipation |
200 |
W |
| |
Linear Derating Factor |
1.3 |
W/ |
| VGS |
Gate-to-Source Voltage |
±16 |
V |
| EAS (Thermally limited) |
Single Pulse Avalanche Energy |
190 |
|
| EAS (Tested ) |
Single Pulse Avalanche Energy Tested Value |
490 |
mJ |
| IAR |
Avalanche Current� |
See Fig.12a, 12b, 15, 16 |
A |
| EAR |
Repetitive Avalanche Energy |
mJ |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
| |
Reflow Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting Torque, 6-32 or M3 screw |
10 lbf`in (1.1N`m) |
|
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DescriptionSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRL1404ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRL1404ZPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parameters: | Technical/Catalog Information | IRL1404ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 75A, 10V |
| Input Capacitance (Ciss) @ Vds | 5080pF @ 25V |
| Power - Max | 200W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRL1404ZPBF
IRL1404ZPBF
|
IRL1404ZPBF Data Sheet
