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MFG:IOR  Package Cooled:TO263  

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Part Number: IRL2203NS

 

MFG: IOR

Package Cooled: TO263

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques...


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IRL2203NS General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications.

IRL2203NS Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 116 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 82 A
IDM Pulsed Drain Current 400 A
PD @TC = 25°C Power Dissipation 3.8 W
  Linear Derating Factor 180 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 60 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 22 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case) °C

IRL2203NS Features

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated

IRL2203NS datasheet

IRL2203NS
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