MFG:IR Package Cooled:D2-PAK D/C:09+
MFG: IR
Package Cooled: D2-PAK
D/C: 09+
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
| Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @10V… |
24 |
|
| ID @ TC = 100°C | Continuous Drain Current, VGS @10V… |
17 |
A |
| IDM | Pulsed Drain Current |
86 |
|
| PD @TC = 25°C | Power Dissipation |
45 |
|
| Linear Derating Factor |
0.30 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 16 |
V |
| EAS | Single Pulse Avalanche Energy |
77 |
mJ |
| IAR | Avalanche Current |
14 |
A |
| EAR | Repetitive Avalanche Energy |
4.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
3.5 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
IRL2703S
PDF/DataSheet Download
The IRL2703PBF has the following features including logic-level gate drive;advanced process technology;dynamic dv/dt rating;fast switching;fully avalanche rated;lead-free. A stop condition is indicated when the bus master drives IRL2703PBF DA from low to hi...
Fifth Generation HEXFETs from International Rectifier IRL2703 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL2703 design that...
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