IRL3303L

MOSFET N-CH 30V 38A TO-262

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SeekIC No. : 003433444 Detail

IRL3303L: MOSFET N-CH 30V 38A TO-262

floor Price/Ceiling Price

Part Number:
IRL3303L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/1

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 38A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 26nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 870pF @ 25V
Power - Max: 3.8W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Input Capacitance (Ciss) @ Vds: 870pF @ 25V
Gate Charge (Qg) @ Vgs: 26nC @ 4.5V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Continuous Drain (Id) @ 25° C: 38A
Manufacturer: International Rectifier
Power - Max: 3.8W
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V


Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27
IDM Pulsed Drain Current 140
PD @TC = 25°C Power Dissipation 3.8 W
PD @TC = 25°C

Power Dissipation

68

W

Linear Derating Factor 0.45 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy 130 mJ
IAR Avalanche Current 20 A
EAR Repetitive Avalanche Energy 6.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

Fifth Generation HEXFETs from International Rectifier IRL3303L utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL3303L is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL3303L provides thehighest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL3303L is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL3303L) is available for lowprofile applications




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