IRL3803LPbF

      The IRL3803LPbF is designed as HEXFET power MOSFET.It would provide the designers with an extremely efficient and reliable device for use in a wide variety of applications.
      It has eight features.The first one is that it would have ligic-level gate drive.The second one is that it would use the advanced process technology.The next one is that it would have surface mount.The next one is that it would have 175°C operating temperature.The next one is that it would hae fast switching.The next one is that it would be fully avalanche raletd.The last one is that it would be lead free.That are all the features.
      Some absolute maximum ratings have been concluded into several points as follow.The first one is about its continuous drain current @Tc=25°C which would be 140A.The second one is about its continuous drain current @Tc=100°C which would be 98A.The next one is about its pulse drain current which would be 470A. The next one is about its power dissipation which would be 200W @Tc=25°C.The next one is about its linear derating factor which would be 1.3W/°C.The next one is about its gate to source voltage which would be +/- 16V.The next one is about its single pulse avalanche energy which would be 610mJ.The next one is about its avalanche current which would be 71A.The next one is about its repititive avalanche energy which would be 20mJ.The next one is about its peak diode recovery dv/dt which would be 5.0V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +175°C.The last one is solering temperature, for 10 seconds which would be 300°C.And so on.
      Also there are some electrical characteristics @ Tj=25°C unless otherwise specified about it.The first one is about its drain to source breakdown voltage which would be min 30V with condition of Vgs=0V, Id=250uA. The second one is about its breakdown voltage temp. coefficient which would be typ 0.052V/°C.The next one is about its gate threshold voltage which would be min 1.0V with condition of Vds=Vgs, Id=250uA.And so on.For more information please contact us.