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Part Number: IRL3803V

 

 

 

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing...


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IRL3803V General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRL3803V Maximum Ratings

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 140 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 110
DM Pulsed Drain Current 470
PD @TC = 25 Power Dissipation 200 W
  Linear Derating Factor 1.4 W/
VGS Gate-to-Source Voltage ± 16 V
IAR Avalanche Current 71 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  

IRL3803V Features

` Advanced Process Technology
` Ultra Low On-Resistance
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated

IRL3803V datasheet

IRL1004
PDF/DataSheet Download

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