MFG:IR Package Cooled:D2-PAK D/C:09+
MFG: IR
Package Cooled: D2-PAK
D/C: 09+
Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques...
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 140 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 110 | |
| IDM | Pulsed Drain Current | 470 | |
| PD @TA = 25 | Power Dissipation | 3.8 | W |
| PD @TC = 25 | Power Dissipation | 200 | W |
| Linear Derating Factor |
1.4 |
W/ | |
| VGS | Diode Maximum Forward Current | ±16 | V |
| IAR | Avalanche Current | 71 | A |
| EAR | Repetitive Avalanche Energy | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
IRL1004
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Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VPbF...
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VLPbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VLPb...
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803Vutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803Vdesign ...
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