Third generation HEXFETs from international rectifier IRL510S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 IRL510Sis a surface mount power package capable of...
Seventh Generation HEXFET® power MOSFETs from International Rectifier IRL404 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL404...
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VSPbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VSPb...
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VS utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VS desi...