MOSFET N-Chan 200V 5.2 Amp
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 5.2 A | ||
Resistance Drain-Source RDS (on) : | 0.8 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 5.2 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 3.3 | |
IDM | Pulsed Drain Current | 21 | |
PD @Tc = 25°C | Power Dissipation | 50 | |
PD @TC = 25°C | Power Dissipation (PCB Mount)** | 3.1 | W |
Linear Derating Factor | 0.40 | W/°C | |
Linear Derating Factor (PCB Mount)** | 0.025 | ||
VGS | Gate-to-Source Voltage | ±10 | V |
EAS | Single Pulse Avalanche Energy | 125 | mJ |
IAR | Avalanche Current | 5.2 | A |
EAR | Repetitive Avalanche Energy | 5.0 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
Third Generation HEXFETs from International Rectifier IRL620S provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The SMD-220 IRL620S is a surface-mount power package capable of accommodating die sizes up to HEX-4. The IRL620S provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The SMD-220 IRL620S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface-mount application.