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MFG:INTERNATIONALRECTIFIER  Package Cooled:DIP/SOP  D/C:08+  

IRL630 Product Image

IRL Series Datasheet download

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Part Number: IRL630

 

MFG: INTERNATIONALRECTIFIER

Package Cooled: DIP/SOP

D/C: 08+

 

Urgent Purchase

IRL630 Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.0 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.7
IDM Pulsed Drain Current 36
PD @TC = 25°C C Power Dissipation 74 W
Linear Derating Factor 0.59 W/°C
VGS Gate-to-Source Voltage ±10 V
EAS Single Pulse Avalanche Energy 250 mJ
IAR Avalanche Current 9.0 A
EAR Repetitive Avalanche Energy 7.4 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
TSTG Storage Temperature Range
-55 to + 150 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

IRL630 Features

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRL630 datasheet

IRL630
PDF/DataSheet Download

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