MOSFET 200V N-Channel a-FET Logic Level
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 9 A | ||
| Resistance Drain-Source RDS (on) : | 0.4 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
200 |
V |
|
ID |
Continuous Drain Current (TC=25°C) |
9 |
A |
| Continuous Drain Current (TC=100°C) |
5.7 | ||
|
IDM |
Drain Current-Pulsed (1) |
32 |
A |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy (2) |
54 |
mJ |
|
IAR |
Avalanche Current (1) |
9 |
A |
|
EAR |
Repetitive Avalanche Energy (1) |
6.9 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (2) |
5 |
V/ns |
|
PD |
Total Power Dissipation (TC=25°C) Linear Derating Factor |
69 0.55 |
W W/°C |
|
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |
| Technical/Catalog Information | IRL630A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 5V |
| Input Capacitance (Ciss) @ Vds | 755pF @ 25V |
| Power - Max | 69W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 27nC @ 5V |
| Package / Case | TO-220 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRL630A IRL630A |