IRL80A

The IRL80A is designed as one kind of GaAs infraed emitters. Typical applications is for a variety of manufacturing and monitoring applications which require beam interruption and light barriers.

The IRL80A has six features. (1)GaAs infrared emitting diode. (2)Clear plastic package with lateral emission. (3)Low cost plastic package. (4)Long term stability. (5)Wide beam (±30°). (6)Matches phototransistor LPT 80 A. Those are all the main features.

Some absolute maximum ratings of IRL80A at temperature of 25°C have been concluded into several points as follow. (1)Its operating temperature range would be from -40°C to 100°C. (2)Its storage temperature range would be from -40°C to 100°C. (3)Its soldering temperature 0.15mm distance from case bottom, soldering time t=5s would be 240°C. (4)Its reverse voltage would be 3V. (5)Its forward current would be 60mA. (6)Its power dissipation would be 100mW. (7)Its derate above 25°C would be 1.33mW/°C. (8)Its thermal resistance junction to ambient would be 750K/W. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of IRL80A at temperature of 25°C are concluded as follow. (1)Its wavelength of peak emission would be 950nm. (2)Its spectral bandwidth at 50% of Imax would be +/-20nm. (3)Its half angle would be +/-30 deg. (4)Its forward voltage would have the maximum value of 1.5V with conditions of If=20mA. (5)Its radiant intensity would have the minimum value of 0.4mW/st with conditions of If=20mA. It should be noted about the radiant intensity that A 1cm2 silicon detector is aligned with the mechanical axis. An aperture is used. And so on. At present we have not got so much information about IRL80A and we would try hard to get more information about IRL80A. If you have any question or suggestion or want to know more information please visit our website and contact us for details. Thank you!