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IRLL014NTR

MOSFET N-CH 55V 2A SOT223

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SeekIC No. : 003432473 Detail

IRLL014NTR: MOSFET N-CH 55V 2A SOT223

IRLL014NTR Data Sheet

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Part Number:
IRLL014NTR
Mfg:
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 140 mOhm @ 2A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 14nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 230pF @ 25V
Power - Max: 1W Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 1W
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) @ Vgs: 14nC @ 10V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 2A
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 140 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds: 230pF @ 25V


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