MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
| Gate-Source Breakdown Voltage : | 16 V | Continuous Drain Current : | 5 A | ||
| Resistance Drain-Source RDS (on) : | 100 mOhms | Configuration : | Single Dual Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOT-223 | Packaging : | Tube |
| Parameter | Max. | Units | |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 5.0 | A |
| ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V | 4.0 | |
| IDM | Pulsed Drain Current | 40 | |
| PD @TA = 25°C | Power Dissipation | 2.8 | W |
| PD @TA = 25°C | Power Dissipation | 1.0 | W |
| Linear Derating Factor | 0.02 | mW/ | |
| VGS | Gate-to-Source Voltage | ± 16 | V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy | 21 | mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 38 | mJ |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLL024ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRLL024ZPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Technical/Catalog Information | IRLL024ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 3A, 10V |
| Input Capacitance (Ciss) @ Vds | 380pF @ 25V |
| Power - Max | 1W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 11nC @ 5V |
| Package / Case | SOT-223 (3 leads + Tab), SC-73, TO-261AA |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLL024ZPBF IRLL024ZPBF |