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MFG:IR  Package Cooled:SOT-223  D/C:09+  

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Part Number: IRLL2703

 

MFG: IR

Package Cooled: SOT-223

D/C: 09+

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRLL2703 General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

IRLL2703 Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V** 5.5 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V* 3.9
 ID @ TC = 70°C Continuous Drain Current, VGS @ 10V*  3.1  
IDM Pulsed Drain Current 16
PD @TC = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TC = 25°C  Power Dissipation (PCB Mount)**  1.0
Linear Derating Factor(PCB Mount)* 8.3 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 080 mJ
IAR Avalanche Current 3.9 A
EAR Repetitive Avalanche Energy* 0.1 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ TSTG Junction and Storage Temperature Range -55 to + 150 °C

IRLL2703 datasheet

IRLL2703
PDF/DataSheet Download

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