MFG:ISSI, Integrated Silicon Solution Inc Category:Integrated Circuits (ICs)
Category: Integrated Circuits (ICs)
MFG: ISSI, Integrated Silicon Solution Inc
Descriptions: IC DRAM EDO 4MB 40-TSOPII
135
3.81000
514.35
| Technical/Catalog Information | IS41LV16256B-35T |
| Vendor | ISSI, Integrated Silicon Solution Inc |
| Category | Integrated Circuits (ICs) |
| Memory Type | DRAM - EDO |
| Memory Size | 4M (256K x 16) |
| Speed | 35nS |
| Interface | Parallel |
| Package / Case | 40-TSOPII |
| Packaging | Tray |
| Voltage - Supply | 3 V ~ 3.6 V |
| Operating Temperature | 0°C ~ 70°C |
| Format - Memory | RAM |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IS41LV16256B 35T IS41LV16256B35T |
IS41C16100
PDF/DataSheet Download
IC DRAM EDO 4MB 40-SOJ
IC DRAM EDO 4MB 40-SOJ
IC DRAM EDO 4MB 40-SOJ
IC DRAM EDO 4MB 40-SOJ
The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per...
The ICSI IS41C16256 and IS41LV16256 is a 262,144 x 16- bit high-performance CMOS Dynamic Random Access Memories. The IS41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access c...
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