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Part Number: IS41LV16256B
Description: The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both pro...
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IS41LV16256B
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DataSheet
General Description
IS41LV16256B General Description
The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16256B ideal for use in 16 and 32-bit wide data bus systems.
These features make the IS41LV16256B ideally suited for high band-width graphics, digital signal processing, highperformance computing systems, and peripheral applications.
The IS41LV16256B is packaged in 40-pin 400-mil SOJ and TSOP (Type II).
IS41LV16256B Maximum Ratings
|
Symbol |
Parameters |
Rating |
Unit |
|
VT |
Voltage on Any Pin Relative to GND |
3.3V 0.5 to 4.6 |
V |
|
VCC |
Supply Voltage |
3.3V 0.5 to 4.6 |
V |
|
IOUT |
Output Current |
50 |
mA |
|
PD |
Power Dissipation |
1 |
W |
|
TA |
Commercial Operation Temperature |
0 to +70 |
°C |
|
TSTG |
Storage Temperature |
55 to +125 |
°C |
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
IS41LV16256B Features
• TTL compatible inputs and outputs
• Refresh Interval: 512 cycles/8 ms
• Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Lead-free available
• Refresh Interval: 512 cycles/8 ms
• Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Lead-free available
IS41LV16256B Connection Diagram
IS41LV16256B
PDF/DataSheet Download
- Datasheet: IS41LV16256B
- File Size: 149928 KB
- Manufacturer: ISSI
- Click here to Download
- ·IS41C16100
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50K
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50KI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50T
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50TI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60K
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60KI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60T
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
IS41LV16256B Relative Products
IS41LV16256
The ICSI IS41C16256 and IS41LV16256 is a 262,144 x 16- bit high-performance CMOS Dynamic Random Access Memories. The IS41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access c...
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