Purchase IS41LV4100, In-stock IS41LV4100 From SeekIC.


Part Number: IS41LV4100
Description: The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Me...


Description: The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Me...
The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 4-bit word.
These features make the IS41C4100 and IS41LV4100 ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IS41C4100 and IS41LV4100 are available in a 20-pin, 300-mil SOJ package.
| Symbol | Parameters |
Rating |
Unit |
| VT | Voltage on Any Pin Relative to GND 5V 3.3V |
1.0 to +7.0 0.5 to +4.6 |
V |
| VCC | Supply Voltage 5V 3.3V |
1.0 to +7.0 0.5 to +4.6 |
V |
| IOUT | Output Current |
50 |
mA |
| PD | Power Dissipation |
1 |
W |
| TA | Commercial Operation Temperature Industrial Operationg Temperature |
0 to +70 40 to +85 |
|
| TSTG | Storage Temperature |
55 to +125 |
IS41LV4100
PDF/DataSheet Download








