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Part Number: IS41LV4100

 

 

 

 

Description: The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Me...


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IS41LV4100 General Description


The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 4-bit word.

These features make the IS41C4100 and IS41LV4100 ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications.

The IS41C4100 and IS41LV4100 are available in a 20-pin, 300-mil SOJ package.

IS41LV4100 Maximum Ratings

Symbol Parameters
Rating
Unit
VT Voltage on Any Pin Relative to GND   5V
                                                       3.3V
1.0 to +7.0
0.5 to +4.6
V
VCC Supply Voltage                                   5V
                                                        3.3V
1.0 to +7.0
0.5 to +4.6
V
IOUT Output Current
50
mA
PD Power Dissipation
1
W
TA Commercial Operation Temperature
Industrial Operationg Temperature
0 to +70
40 to +85

TSTG Storage Temperature
55 to +125
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

IS41LV4100 Features

• TTL compatible inputs and outputs
• Refresh Interval: 1024 cycles/16 ms
• Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply
   5V ± 10% (IS41C4100)
   3.3V ± 10% (IS41LV4100)
• Industrail Temperature Range -40 to 85

IS41LV4100 Connection Diagram

IS41LV4100  Connection Diagram

IS41LV4100 datasheet

IS41LV4100
PDF/DataSheet Download

  • Datasheet: IS41LV4100
  • File Size: 147357 KB
  • Manufacturer: ISSI [Integrated Silicon Solution, Inc]
  • Click here to Download

Find IS41LV4100 Suppliers

  • ·IS41C16100
  • ISSI [Integrated Silicon Solution, Inc] 
  • 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 
  • 126601 KB
  • IS41C16100 Datasheet Download
  • ·IS41C16100-50K
  • ISSI [Integrated Silicon Solution, Inc] 
  • 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 
  • 126601 KB
  • IS41C16100-50K Datasheet Download
  • ·IS41C16100-50KI
  • ISSI [Integrated Silicon Solution, Inc] 
  • 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 
  • 126601 KB
  • IS41C16100-50KI Datasheet Download
  • ·IS41C16100-50T
  • ISSI [Integrated Silicon Solution, Inc] 
  • 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 
  • 126601 KB
  • IS41C16100-50T Datasheet Download
  • ·IS41C16100-50TI
  • ISSI [Integrated Silicon Solution, Inc] 
  • 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 
  • 126601 KB
  • IS41C16100-50TI Datasheet Download
  • ·IS41C16100-60K
  • ISSI [Integrated Silicon Solution, Inc] 
  • 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 
  • 126601 KB
  • IS41C16100-60K Datasheet Download
  • ·IS41C16100-60KI
  • ISSI [Integrated Silicon Solution, Inc] 
  • 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 
  • 126601 KB
  • IS41C16100-60KI Datasheet Download
  • ·IS41C16100-60T
  • ISSI [Integrated Silicon Solution, Inc] 
  • 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 
  • 126601 KB
  • IS41C16100-60T Datasheet Download

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