Purchase IS41LV8200A, In-stock IS41LV8200A From SeekIC.
Part Number: IS41LV8200A
Description: The ISSI IS41LV8200A is 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These de...
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IS41LV8200A
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DataSheet
General Description
IS41LV8200A General Description
The ISSI IS41LV8200A is 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.
These features make the IS41LV8200A ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications.
The IS41LV8200A is packaged in 28-pin 300-mil SOJ with JEDEC standard pinouts.
IS41LV8200A Maximum Ratings
|
Symbol |
Parameters |
Rating |
Unit |
|
VT |
Voltage on Any Pin Relative to GND |
3.3V 0.5 to +4.6 |
V |
|
VCC |
Supply Voltage |
3.3V 0.5 to +4.6 |
V |
|
IOUT |
Output Current |
50 |
mA |
|
PD |
Power Dissipation |
1 |
W |
|
TA |
Commercial Operation Temperature |
-50to +125 |
°C |
|
TSTG |
Storage Temperature |
55 to +125 |
°C |
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
IS41LV8200A Features
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs
• Refresh Interval:
-- 2,048 cycles/32 ms
• Refresh Mode: RAS-Only,CAS-before-RAS (CBR), and Hidden
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Lead-free available
• TTL compatible inputs and outputs
• Refresh Interval:
-- 2,048 cycles/32 ms
• Refresh Mode: RAS-Only,CAS-before-RAS (CBR), and Hidden
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Lead-free available
IS41LV8200A Connection Diagram
IS41LV8200A
PDF/DataSheet Download
- Datasheet: IS41LV8200A
- File Size: 129611 KB
- Manufacturer: ISSI
- Click here to Download
- ·IS41C16100
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50K
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50KI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50T
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50TI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60K
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60KI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60T
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
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