Purchase IS41LV85120, In-stock IS41LV85120 From SeekIC.


Part Number: IS41LV85120
Description: The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Me...


Description: The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Me...
The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 8-bit word. The Byte Write control, of upper and lower byte, makes the IS41C85120 and IS41LV85120 ideal for use in 16 and 32-bit wide data bus systems.
These features make the IS41C85120 and IS41LV85120 ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IS41C85120 and IS41LV85120 are available in a 28-pin, 400-mil SOJ package.
| Symbol | Parameters |
Rating |
Unit | |
| VT VCC IOUT PD TA TSTG |
Voltage on Any Pin Relative to GND Supply Voltage Output Current Power Dissipation Commercial Operation Temperature Industrail Temperature Storage Temperature |
5V 3.3V 5V 3.3V |
1.0 to +7.0 -0.5 to 4.6 1.0 to +7.0 -0.5 to 4.6 50 1 0 to +70 40 to +85 55 to +125 |
V V V V mA W |
IS41LV85120
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