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Part Number: IS41LV85120A
Description: The ISSI IS41C85120A and IS41LV85120A are 524,288 x 8- bit high-performance CMOS Dynamic Random Access...


Description: The ISSI IS41C85120A and IS41LV85120A are 524,288 x 8- bit high-performance CMOS Dynamic Random Access...
The ISSI IS41C85120A and IS41LV85120A are 524,288 x 8- bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 8-bit word. The Byte Write control, of upper and lower byte, makes the IS41C85120A and IS41LV85120A ideal for use in 16 and 32-bit wide data bus systems.
These features make the IS41C85120A and IS41LV85120A ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IS41C85120A and IS41LV85120A are available in a 28-pin, 400-mil SOJ package.
|
Symbol |
Parameters |
Rating |
Unit |
|
VT |
Voltage on Any Pin Relative to GND |
5V 1.0 to +7.0 3.3V 0.5 to +4.6 |
V |
|
VCC |
Supply Voltage |
5V 1.0 to +7.0 3.3V 0.5 to +4.6 |
V |
|
IOUT |
Output Current |
50 |
mA |
|
PD |
Power Dissipation |
1 |
W |
|
TA |
Commercial Operation Temperature |
0 to +70 |
°C |
|
TSTG |
Storage Temperature |
55 to +125 |
°C |
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
IS41LV85120A
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