IS64C6416

Features:

• High-speed access time: 15 and 20 ns
• CMOS low power operation
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Industrial temperature available
• Available in 44-pin SOJ package and 44-pin TSOP (Type II)



Pinout




Specifications

Symbol	Parameter	Value	UNIT
VTERM	Terminal Voltage with Respect to GND	0.5 to +7.0	V
TSTG	Storage Temperature	65 to +150
PT	Power Dissipation	1.5	W
IOUT	DC Output Current (LOW)	2.0	mA

Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
    to the device. This is a stress rating only and functional operation of the device at these or any other
    conditions above those indicated in the operational sections of this specification is not implied. Exposure
    to absolute maximum rating conditions for extended periods may affect reliability.


Description

The ISSI IS64C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumption.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

The IS64C6416 is packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type II).