MOSFET 5 Amps 800V 1.2 Rds
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Features: · Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mount...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
| Continuous Drain Current : | 5 A | Resistance Drain-Source RDS (on) : | 1.2 Ohms | ||
| Configuration : | Single | Mounting Style : | SMD/SMT | ||
| Package / Case : | ISOPLUS220 | Packaging : | Tube |
| Technical/Catalog Information | IXFC10N80P |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | - |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 100W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | ISOPLUS220? |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFC10N80P IXFC10N80P |