MOSFET 8 Amps 800V 0.77 Rds
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Features: · Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mount...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V |
| Continuous Drain Current : | 8 A | Resistance Drain-Source RDS (on) : | 0.75 Ohms |
| Configuration : | Single | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | SMD/SMT | Package / Case : | ISOPLUS220 |
| Packaging : | Tube |
| Technical/Catalog Information | IXFC14N80P |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 770 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds | 3900pF @ 25V |
| Power - Max | 130W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 61nC @ 10V |
| Package / Case | ISOPLUS220? |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFC14N80P IXFC14N80P |