Position: Home  > All Categories> Integrated Circuits (ICs) > IXFC52N30P

IXFC52N30P

MOSFET 24 Amps 300V 0.066 Rds

product image

IXFC52N30P Picture
See larger image
SeekIC No. : 00154481 Detail

IXFC52N30P: MOSFET 24 Amps 300V 0.066 Rds

IXFC52N30P Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXFC52N30P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.075 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220 Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.075 Ohms
Drain-Source Breakdown Voltage : 300 V
Package / Case : ISOPLUS 220
Packaging : Box


Features:

·Silicon chip on Direct-Copper-Bond substrate
   -High power dissipation
   -Isolated mounting surface
   -2500V electrical isolation
·Low drain to tab capacitance(<30pF)


Application

·Easy to mount
·Space savings
·High power density


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ		 300
300		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM
 TC = 25°C
TC = 25°C, pulse width limited by TJM
 32
150		 A
A
IAR
EAR
EAS		 TC = 25°C
TC = 25°C
TC= 25°C		 52
30
1.0		 A
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2 Ω		 10 V/ns
PD TC = 25°C 100 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL
VISOL		 1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS, t = 1minute, leads-to-tab		 300
2500		 °C
V~
FC Mounting Force 11..65/2.5..15 N/lb
Weight ISOPLUS220 2.0 g



Parameters:

Technical/Catalog InformationIXFC52N30P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C24A
Rds On (Max) @ Id, Vgs75 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds 3490pF @ 25V
Power - Max100W
PackagingBulk
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFC52N30P
IXFC52N30P



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Test Equipment
TOP853
TOP2005
Kits
IT243
UVSC-110-4E1
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Crystals and Oscillators
WT325BI0030.000000
2SB49
Filters
PICO2205A
PICO2204A
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
View more