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IXFC52N30P

MOSFET 24 Amps 300V 0.066 Rds

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SeekIC No. : 00154481 Detail

IXFC52N30P: MOSFET 24 Amps 300V 0.066 Rds

IXFC52N30P Data Sheet

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Part Number:
IXFC52N30P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.075 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220 Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.075 Ohms
Drain-Source Breakdown Voltage : 300 V
Package / Case : ISOPLUS 220
Packaging : Box


Features:

·Silicon chip on Direct-Copper-Bond substrate
   -High power dissipation
   -Isolated mounting surface
   -2500V electrical isolation
·Low drain to tab capacitance(<30pF)


Application

·Easy to mount
·Space savings
·High power density


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ		 300
300		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM
 TC = 25°C
TC = 25°C, pulse width limited by TJM
 32
150		 A
A
IAR
EAR
EAS		 TC = 25°C
TC = 25°C
TC= 25°C		 52
30
1.0		 A
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2 Ω		 10 V/ns
PD TC = 25°C 100 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL
VISOL		 1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS, t = 1minute, leads-to-tab		 300
2500		 °C
V~
FC Mounting Force 11..65/2.5..15 N/lb
Weight ISOPLUS220 2.0 g



Parameters:

Technical/Catalog InformationIXFC52N30P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C24A
Rds On (Max) @ Id, Vgs75 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds 3490pF @ 25V
Power - Max100W
PackagingBulk
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFC52N30P
IXFC52N30P



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