MOSFET 80 Amps 85V 0.009 Rds
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Features: · Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mount...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 85 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
| Resistance Drain-Source RDS (on) : | 0.011 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | ISOPLUS 220 | Packaging : | Tube |
| Technical/Catalog Information | IXFC80N085 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 85V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | 4800pF @ 25V |
| Power - Max | 230W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V |
| Package / Case | ISOPLUS220? |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFC80N085 IXFC80N085 |