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IXFC80N10

MOSFET 100 Amps 100V 0.0125 Rds

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SeekIC No. : 00164378 Detail

IXFC80N10: MOSFET 100 Amps 100V 0.0125 Rds

IXFC80N10 Data Sheet

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Part Number:
IXFC80N10
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0125 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0125 Ohms
Package / Case : ISOPLUS 220


Features:

·Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
· Low drain to tab capacitance(<35pF)
· Low RDS (on)
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Fast intrinsic Rectifier


Application

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control


Specifications

Symbol Conditions Maximum Ratings
VCES TJ = 25 to 150 100 v
VCGR TJ = 25 to 150; RGE = 1K 100 v
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25, 60 A
IC90 TC = 90 35 A
ICM TC = 90°C,tp= 1 ms 70 A
RBSOA VGE= 15 V, TVJ = 125, RG = 10
Clamped inductive load, L = 30 H		 ICM =110
VCEK < VCES		 A
TSC
(SCSOA)		 VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 10 Ω non repetitive		 10 µs
PC TC = 25IGBT
Diode		 250
80		 W
W
TJ   -55 ... +150
TJM   -55 ... +150
  Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300
Md Mounting torque TO-220
TO-247		 0.4 - 0.6
0.8 - 1.2		 Nm
Nm
Weight TO-247 6
 g



Parameters:

Technical/Catalog InformationIXFC80N10
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs12.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 4800pF @ 25V
Power - Max230W
PackagingTube
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFC80N10
IXFC80N10



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