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IXFH26N50P

MOSFET HiPERFET Id26 BVdass500

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SeekIC No. : 00151096 Detail

IXFH26N50P: MOSFET HiPERFET Id26 BVdass500

IXFH26N50P Data Sheet

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Part Number:
IXFH26N50P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.23 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.23 Ohms


Features:

 International standard packages
 Fast intrinsic diode
 Unclamped Inductive Switching (UIS)rated
Low package inductance
   - easy to drive and to protect


Application

 Easy to mount
 Space savings
 High power density


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
500
500
V
V
VGS
VGEM		 Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
26
78
A
A
IAR
EAR
EAS		 TC = 25°C
TC = 25°C
TC = 25°C
26
40
1.0
A
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4Ω
10
V/ns
PD TC = 25°C
400
W

TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s
Plastic body
300
260

°C
°C

Md Mounting torque (TO-247)
1.13/10
Nm/lb.in.
FC Mounting force (PLUS220SMD)
11..65/2.5..15
N/lb
Weight TO-3P
PLUS220 & PLUS220SMD
6
5
g
g



Parameters:

Technical/Catalog InformationIXFH26N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs230 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH26N50P
IXFH26N50P



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