IXFN120N20

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Continuous Drain Current : 120 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 0.017 Ohms
Configuration : Single Dual Source
Package / Case : SOT-227B


Features:

·Encapsulating epoxy meets UL 94 V-0, flammability classification
·International standard package
·miniBLOC, with Aluminium nitride isolation
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
·Fast intrinsic Rectifier


Application

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·Temperature and lighting controls
·Low voltage relays


Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	200 200	V V
VGS VGSM	Continuous Transient	±20 ±30	V V
ID25 IDM IAR	TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C	120 480 120	A A A
EAR EAS	TC = 25°C TC= 25°C	64 4	mJ J
dv/dt	IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 Ω	5	V/ns
PD	TC = 25°C	700	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150	°C °C °C
VISOL	50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s	2500 3000	V~ V~
Md	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g

Parameters:

Technical/Catalog Information	IXFN120N20
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	17 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	9100pF @ 25V
Power - Max	600W
Packaging	Tube
Gate Charge (Qg) @ Vgs	360nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IXFN120N20 IXFN120N20