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IXFP7N100P

MOSFET 7 Amps 1000V

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SeekIC No. : 00150889 Detail

IXFP7N100P: MOSFET 7 Amps 1000V

IXFP7N100P Data Sheet

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Part Number:
IXFP7N100P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1 KV
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 1.9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 1.9 Ohms
Drain-Source Breakdown Voltage : 1 KV


Parameters:

Technical/Catalog InformationIXFP7N100P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs1.8 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2590pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs47nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFP7N100P
IXFP7N100P



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