MOSFET 105 Amps 150V 0.0125 Rds
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Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 105 A | ||
| Resistance Drain-Source RDS (on) : | 0.0125 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | ISOPLUS 247 | Packaging : | Tube |
| Technical/Catalog Information | IXFR150N15 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 105A |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 75A, 10V |
| Input Capacitance (Ciss) @ Vds | 9100pF @ 25V |
| Power - Max | 400W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 360nC @ 10V |
| Package / Case | ISOPLUS247? |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFR150N15 IXFR150N15 |