MOSFET 22 Amps 900V 0.47W Rds
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Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated...
| Drain-Source Breakdown Voltage : | 900 V | Resistance Drain-Source RDS (on) : | 400 mOhms |
| Configuration : | Single | Package / Case : | ISOPLUS 247 |
| Packaging : | Box |
| Technical/Catalog Information | IXFR24N90Q |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | - |
| Rds On (Max) @ Id, Vgs | - |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | - |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | ISOPLUS247? |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFR24N90Q IXFR24N90Q |