Position: Home  > All Categories> Integrated Circuits (ICs) > IXFR44N50Q

IXFR44N50Q

MOSFET 34 Amps 500V 0.12 Rds

product image

IXFR44N50Q Picture
See larger image
SeekIC No. : 00158198 Detail

IXFR44N50Q: MOSFET 34 Amps 500V 0.12 Rds

IXFR44N50Q Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXFR44N50Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 34 A
Resistance Drain-Source RDS (on) : 0.12 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 34 A
Package / Case : ISOPLUS 247
Resistance Drain-Source RDS (on) : 0.12 Ohms


Features:

 Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
 Low drain to tab capacitance(<30pF)
 IXYS advanced low Qg process
 Rugged polysilicon gate cell structure
 Rated for Unclamped Inductive Load Switching (UIS)
 Fast intrinsic diode


Application

 DC-DC converters
 Battery chargers
 Switched-mode and resonant-mode power supplies
 DC choppers
 AC motor control


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS= 1 M		  
500
500
V
V
VGS
VGEM		 Continuous
Transient		  
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, Note 1
TC = 25°C
44N50Q3
48N50Q4
44N50Q1
48N50Q1
44N50Q4
48N50Q4
34
40
176
192
44
48
A
A
A
A
A
A

EAR
EAS
TC = 25°C
TC = 25°C		  
60
2.5

mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2		  
20
V/ns
PD TC = 25°C  
416
W

TJ
TJM
Tstg

  
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s  
300

°C

VISOL 50/60 Hz, RMS           t = 1 min  
2500
V~
Weight  

5

g



Parameters:

Technical/Catalog InformationIXFR44N50Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C34A
Rds On (Max) @ Id, Vgs120 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds 7000pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR44N50Q
IXFR44N50Q



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Resistors
A101G
3006P-1-205LF
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Optical Inspection Equipment
AA924
A21K4B
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Crystals and Oscillators
WT325BI0030.000000
2SB49
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more